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NTMS4801N Power MOSFET
Features
30 V, 12 A, N-Channel, SO-8
* * * *
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free Device
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V(BR)DSS 30 V RDS(ON) MAX 9.0 mW @ 10 V 12.5 mW @ 4.5 V ID MAX 12 A
Applications
* DC-DC Converters * Synchronous MOSFET * Printers
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA, t v 10 s (Note 1) Power Dissipation RqJA, t v 10 s(Note 1) Pulsed Drain Current TA = 25C TA = 70C TA = 25C TA = 25C Steady State TA = 70C TA = 25C TA = 25C TA = 70C TA = 25C TA = 25C, tp = 10 ms PD IDM TJ, Tstg IS EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 9.9 7.9 1.41 7.5 6.0 0.8 12 9.6 2.1 35 -55 to 150 2.1 98 W A C A mJ W A W A Unit V V A
N-Channel D
G S
MARKING DIAGRAM/ PIN ASSIGNMENT
1
SO-8 CASE 751 STYLE 12
Source Source Source Gate
1 4801N AYWWG G Top View
8
Drain Drain Drain Drain
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VDD = 30 V, VGS = 10 V, IL = 14 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
4801N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package SO-8 (Pb-Free) Shipping 2500/Tape & Reel NTMS4801NR2G
TL
260
C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 10 s (Note 1) Junction-to-Foot (Drain) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJF RqJA Value 88.5 60.5 23 156 Unit C/W
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 in sq pad size. 2. Surfacemounted on FR4 board using the minimum recommended pad size.
(c) Semiconductor Components Industries, LLC, 2009
April, 2009 - Rev. 2
1
Publication Order Number: NTMS4801N/D
NTMS4801N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD QG(TOT) td(on) tr td(off) tf VSD tRR ta tb QRR LS LD LG RG TA = 25C VGS = 0 V, dIS/dt = 100 A/ms, IS = 2.1 A TJ = 25C TJ = 125C VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W VGS = 10 V, VDS = 15 V, ID = 12 A VGS = 4.5 V, VDS = 15 V, ID = 12 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A Forward Transconductance VDS = 1.5 V, ID = 12 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge 1630 288 150 12.2 1.8 5.1 4.4 25 nC 2201 389 225 14 nC pF TJ = 25C TJ = 85C VGS = 0 V, ID = 250 mA 30 7.0 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
VGS = 0 V, VDS = 24 V
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = 20 V VGS = VDS, ID = 250 mA 1.0 6.0 7.0 9.5 26
2.5
V mV/C
9.0 12.5
mW
S
SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 10.5 3.7 29 9.8 ns
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 2.1 A 0.73 0.6 22 11 11 13 nC ns 1.0 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance
0.66 0.20 1.5 1.1 1.8
nH nH nH W
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
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2
NTMS4801N
TYPICAL PERFORMANCE CURVES
22 20 ID, DRAIN CURRENT (AMPS) 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 2.8 V 2.6 V 6 3.0 V 3.4 V to10V TJ = 25C ID, DRAIN CURRENT (AMPS) 22 20 18 16 14 12 10 8 6 4 2 0 1.5 TJ = 100C TJ = 25C 2 2.5 TJ = -55C 3 3.5 4 VDS 10 V
3.2 V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0 2 4 6 8 10 TJ = 25C ID = 12 A 0.016
Figure 2. Transfer Characteristics
TJ = 25C 0.014 0.012 0.01 0.008 VGS = 10 V 0.006 0.004 2
VGS = 4.5 V
4
6
8
10
12
14
16
18
20
22
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 -50 100 100000 VGS = 10 V ID = 12 A IDSS, LEAKAGE (nA) 10000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 150C TJ = 125C
1000
-25
0
25
50
75
100
125
150
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTMS4801N
TYPICAL PERFORMANCE CURVES
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2500 TJ = 25C C, CAPACITANCE (pF) 2000 1500 1000 Coss 500 0 Crss 0 5 10 15 20 25 DRAIN-TO-SOURCE VOLTAGE (VOLTS) 30 Ciss VGS = 0 V 10 8 VDS 6 4 2 0 ID = 12 A TJ = 25C 0 5 10 20 25 15 QG, TOTAL GATE CHARGE (nC) QGS QGD VGS QT 20 18 16 14 12 10 8 6 4 2 0 30 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge
1000 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 10 V t, TIME (ns) 100
4 VGS = 0 V TJ = 25C 3
td(off) tf tr td(on)
2
10
1
1
1
10 RG, GATE RESISTANCE (OHMS)
100
0 0.5
0.55
0.6
0.65
0.7
0.75
0.8
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 100 ID, DRAIN CURRENT (AMPS) 10 ms 10 100 ms 1 ms 1 VGS = 20 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 10 ms 100
Figure 10. Diode Forward Voltage vs. Current
ID = 14 A 75
50
0.1
25
dc
0.01 0.1
100
0 25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
125 50 75 100 TJ, STARTING JUNCTION TEMPERATURE (C)
150
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature
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4
NTMS4801N
PACKAGE DIMENSIONS
SOIC-8 CASE 751-07 ISSUE AJ
-X- A
8 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244
B
1
S
4
0.25 (0.010)
M
Y
M
-Y- G
K
C -Z- H D 0.25 (0.010)
M SEATING PLANE
N
X 45 _
0.10 (0.004)
M
J
ZY
S
X
S
DIM A B C D G H J K M N S
SOLDERING FOOTPRINT*
1.52 0.060
STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN
7.0 0.275
4.0 0.155
0.6 0.024
1.270 0.050
SCALE 6:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMS4801N/D

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